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mwetter committed Jan 4, 2024
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77 changes: 53 additions & 24 deletions IBPSA/Electrical/BaseClasses/PV/PVElectricalSingleDiodeMPP.mo
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Expand Up @@ -126,33 +126,62 @@ information.
The analytical approach bases on simplifications that result in explicit equations.
These can be solved more easily by the solver resulting in higher simulation speed.
The resulting five unknown parameters at standard conditions basing non explicit functions are
the modified ideality factor </p>
<p align=\"center\" style=\"font-style:italic;\">a<sub>0</sub> = U<sub>L,0</sub> (1- T<sub>cell,0</sub> &beta;<sub>U,L</sub>) &frasl; (50.1 - T<sub>cell,0</sub> &alpha;<sub>I,K</sub>),</p>
<p> the serial resistance </p>
<p align=\"center\" style=\"font-style:italic;\">R<sub>s,0</sub> = (a<sub>0</sub> (w<sub>0</sub> -1) - U<sub>mp,0</sub> ) &frasl; (I<sub>mp,0</sub>),</p>
<p> the parallel resistance </p>
<p align=\"center\" style=\"font-style:italic;\">R<sub>sh,0</sub> = (a<sub>0</sub> (w<sub>0</sub> -1)) &frasl; (I<sub>L,0</sub>(1-1 &frasl; w<sub>0</sub>)-I<sub>mp,0</sub>),</p>
<p> the photo current </p>
<p align=\"center\" style=\"font-style:italic;\">I<sub>ph,0</sub> = (1+R<sub>s,0</sub> &frasl; R<sub>sh,0</sub>) I<sub>K,0</sub>,</p>
<p> and the saturation current </p>
<p align=\"center\" style=\"font-style:italic;\">I<sub>s,0</sub> = I<sub>ph,0</sub> e<sup>(-U<sub>L,0</sub>/a<sub>0+1</sub>)</sup>.</p>
<p>The system of equations bases on an approximation of the Lambert equation W at standard conditions </p>
<p align=\"center\" style=\"font-style:italic;\">w<sub>0</sub> = W(e<sup>U<sub>L,0</sub>/a<sub>L,0</sub></sup>).</p>
<p>Finally, an explicit formulation of the I-V charactierstic at the maximum power point (mp) is dervied</br>
for the current at the maximum power point</p>
<p align=\"center\" style=\"font-style:italic;\">I<sub>mp</sub> = I<sub>ph</sub>(1-1/w)-a(w-1)/R<sub>sh</sub> </p>
<p>and the voltage at the maximum power point</p>
<p align=\"center\" style=\"font-style:italic;\">U<sub>mp</sub> = a(w-1) - R<sub>s</sub> I<sub>mp</sub>.</p>
<p>The parameters during operating conditions result from simplified relations
to the parameter values at standard conditions following (DeSoto et al.,2006).</p>
the modified ideality factor </p>
<p align=\"center\" style=\"font-style:italic;\">
a<sub>0</sub> = U<sub>L,0</sub> (1- T<sub>cell,0</sub> &beta;<sub>U,L</sub>) &frasl; (50.1 - T<sub>cell,0</sub> &alpha;<sub>I,K</sub>),
</p>
<p> the serial resistance
</p>
<p align=\"center\" style=\"font-style:italic;\">
R<sub>s,0</sub> = (a<sub>0</sub> (w<sub>0</sub> -1) - U<sub>mp,0</sub> ) &frasl; (I<sub>mp,0</sub>),</p>
<p>
the parallel resistance
</p>
<p align=\"center\" style=\"font-style:italic;\">
R<sub>sh,0</sub> = (a<sub>0</sub> (w<sub>0</sub> -1)) &frasl; (I<sub>L,0</sub>(1-1 &frasl; w<sub>0</sub>)-I<sub>mp,0</sub>),
</p>
<p>
the photo current
</p>
<p align=\"center\" style=\"font-style:italic;\">
I<sub>ph,0</sub> = (1+R<sub>s,0</sub> &frasl; R<sub>sh,0</sub>) I<sub>K,0</sub>,
</p>
<p>
and the saturation current
</p>
<p align=\"center\" style=\"font-style:italic;\">
I<sub>s,0</sub> = I<sub>ph,0</sub> e<sup>(-U<sub>L,0</sub>/a<sub>0+1</sub>)</sup>.
</p>
<p>
The system of equations bases on an approximation of the Lambert equation W at standard conditions
</p>
<p align=\"center\" style=\"font-style:italic;\">
w<sub>0</sub> = W(e<sup>U<sub>L,0</sub>/a<sub>L,0</sub></sup>).
</p>
<p>
Finally, an explicit formulation of the I-V charactierstic at the maximum power point (mp) is derived
for the current at the maximum power point
</p>
<p align=\"center\" style=\"font-style:italic;\">
I<sub>mp</sub> = I<sub>ph</sub>(1-1/w)-a(w-1)/R<sub>sh</sub>
</p>
<p>
and the voltage at the maximum power point
</p>
<p align=\"center\" style=\"font-style:italic;\">
U<sub>mp</sub> = a(w-1) - R<sub>s</sub> I<sub>mp</sub>.
</p>
<p>
<br/>
Validated with experimental data from NIST (Boyd, 2017).
The parameters during operating conditions result from simplified relations
to the parameter values at standard conditions following (DeSoto et al.,2006).
</p>
<p>
The model was validated with experimental data from NIST (Boyd, 2017).
</p>
<p>
Module calibration is based on manufactory data.
The module calibration is based on manufactory data.
</p>
<p>
<br/>
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